摘要
The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H2S decomposes to form the dissociative species of S, HS, and H on the surface at 100 K. The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H2S dissociation bonds to the P atom. H2S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H2S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.
原文 | 英語 |
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頁(從 - 到) | 3663-3668 |
頁數 | 6 |
期刊 | Journal of Physical Chemistry B |
卷 | 103 |
發行號 | 18 |
DOIs | |
出版狀態 | 已發佈 - 1999 5月 6 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與理論化學
- 表面、塗料和薄膜
- 材料化學