Adsorption and decomposition of H2S on InP(100)

Wei Hsiu Hung, Hung Chih Chen, Che Chen Chang, Jyh Tsung Hsieh, Huey Liang Hwang

研究成果: 雜誌貢獻文章

11 引文 斯高帕斯(Scopus)

摘要

The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H2S decomposes to form the dissociative species of S, HS, and H on the surface at 100 K. The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H2S dissociation bonds to the P atom. H2S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H2S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.

原文英語
頁(從 - 到)3663-3668
頁數6
期刊Journal of Physical Chemistry B
103
發行號18
DOIs
出版狀態已發佈 - 1999 五月 6

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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  • 引用此

    Hung, W. H., Chen, H. C., Chang, C. C., Hsieh, J. T., & Hwang, H. L. (1999). Adsorption and decomposition of H2S on InP(100). Journal of Physical Chemistry B, 103(18), 3663-3668. https://doi.org/10.1021/jp984629o