Achieving synergistic performance through highly compacted microcrystalline rods induced in Mo doped GeTe based compounds

Safdar Imam, Khasim Saheb Bayikadi, Mohammad Ubaid, V. K. Ranganayakulu, Sumangala Devi, Bhalchandra S. Pujari, Yang Yuan Chen, Li Chyong Chen, Kuei Hsien Chen, Feng Li Lin, Raman Sankar*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Among the lead-free thermoelectric material, germanium telluride (GeTe) has been extensively investigated due to its high thermoelectric performance (ZT) in mid-temperature; however, high p-type carrier density (∼1021 cm−3) hinder its suitability for higher ZT. To enhance the thermoelectric performance of the environmentally favorable GeTe, we explored the Mo doping significantly optimizes the carrier concentration along with uniquely unveiled microcrystalline rods accompanying compact grain boundaries, high-density planar defects, and point defects effectuating all-frequency phonon scattering yields to lower down the thermal conductivity. Furthermore, Sb/Bi co-doping with Mo at the Ge sites predominantly reduces the carrier concentration and thermal conductivity to attain a higher ZT. The co-doping of Bi manifested a more prominent role in achieving the highest ZT of ∼2.3 at 673 K for the sample composition with Ge0.89Mo0·01Bi0.1Te. This study demonstrates an exciting hidden aspect of microstructural modification by forming highly dense microcrystalline rods through Mo doping to achieve high performance in the GeTe system.

原文英語
文章編號100571
期刊Materials Today Physics
22
DOIs
出版狀態已發佈 - 2022 1月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 能源(雜項)
  • 物理與天文學(雜項)

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