Achieving high-scalability negative capacitance FETs with uniform Sub-35 mV/dec switch using dopant-free hafnium oxide and gate strain

Chia Chi Fan, Chun Hu Cheng, Chun Yuan Tu, Chien Liu, Wan Hsin Chen, Tun Jen Chang, Chun Yen Chang

研究成果: 書貢獻/報告類型會議論文篇章

8 引文 斯高帕斯(Scopus)

摘要

For the first time, we successfully demonstrated that the 4-nm-thick dopant-free HfO2 NCFETs using gate strain can implement an energy-efficient switch of a low gate overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. The gate strain favorably rearranges oxygen vacancies and boosts orthorhombic phase transition. Furthermore, the dopant-free HfO2 NCFET can be further improved by in-situ nitridation process. The 4-nm-thick nitrided HfO2 NCFETs achieve a steep symmetric sub-35 mV/dec switch, a sustained sub-40 mV/dec SS distribution, and excellent stress immunity during NC switch. The high-scalability and dopant-free NCFET shows the great potential for the application of future highly-scaled 3D CMOS technology.

原文英語
主出版物標題2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面139-140
頁數2
ISBN(電子)9781538642160
DOIs
出版狀態已發佈 - 2018 十月 25
事件38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, 美国
持續時間: 2018 六月 182018 六月 22

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2018-June
ISSN(列印)0743-1562

其他

其他38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
國家/地區美国
城市Honolulu
期間2018/06/182018/06/22

ASJC Scopus subject areas

  • 電氣與電子工程

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