@inproceedings{0ff5bec83b3d41609a5c205bec0277fc,
title = "A X-Band fully-integrated CMOS power amplifier using current combining technique",
abstract = "A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.",
keywords = "CMOS, Current combining technique (CCT), Power amplifier (PA), Transformer, X-band",
author = "Tsai, {Jeng Han} and Liu, {Wen Hung} and Shen, {Po Chun} and Huang, {Wang Lung}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 8th IEEE Global Conference on Consumer Electronics, GCCE 2019 ; Conference date: 15-10-2019 Through 18-10-2019",
year = "2019",
month = oct,
doi = "10.1109/GCCE46687.2019.9015629",
language = "English",
series = "2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "411--412",
booktitle = "2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019",
}