A X-Band fully-integrated CMOS power amplifier using current combining technique

Jeng Han Tsai, Wen Hung Liu, Po Chun Shen, Wang Lung Huang

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A transformer-based current combining technique (CCT) are designed for X-band CMOS power amplifier (PA). A fully-integrated X-band PA adopting the transformer-based CCT is designed and implemented on 0.18-μm bulk CMOS technology. The X-band CMOS PA transmits saturation output power (Psat) of 27.3 dBm with 19 % of power-added efficiency (PAE) at 10.5 GHz and the output 1-dB compression point (OP1dB) is 23.84 dBm. To the author's knowledge, the PA using CCT is the first half-watt bulk CMOS PA with good power density above 10 GHz to date.

原文英語
主出版物標題2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面411-412
頁數2
ISBN(電子)9781728135755
DOIs
出版狀態已發佈 - 2019 十月
事件8th IEEE Global Conference on Consumer Electronics, GCCE 2019 - Osaka, 日本
持續時間: 2019 十月 152019 十月 18

出版系列

名字2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

會議

會議8th IEEE Global Conference on Consumer Electronics, GCCE 2019
國家日本
城市Osaka
期間2019/10/152019/10/18

ASJC Scopus subject areas

  • Instrumentation
  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

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