@article{5d5f8577380048f78ea50bf30bb87478,
title = "A W-band medium power amplifier in 90 nm CMOS",
abstract = "A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.",
keywords = "CMOS, Microwave monolithic integrated circuit (MMIC), Power amplifier (PA), W-band",
author = "Jiang, {Yu Sian} and Tsai, {Jeng Han} and Huei Wang",
note = "Funding Information: Manuscript received May 29, 2008; revised August 13, 2008. Current version published December 04, 2008. This work was supported in part by the TSMC-NTU JDP Project, the National Science Council, and Ministry of Education, Taiwan, R.O.C.. (Projects NSC 96-2752-E-002-003-PAE, NSC 96-2219-E-002-015, NSC 96-2219-E-002-020, and 95R0062-AE00-00).",
year = "2008",
month = dec,
doi = "10.1109/LMWC.2008.2007712",
language = "English",
volume = "18",
pages = "818--820",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}