A standard and reliable method to fabricate two-dimensional nanoelectronics

Kristan Bryan C. Simbulan, Po Chun Chen, Yun Yan Lin, Yann Wen Lan*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D materials is still in nascent stages, scientists cannot fully rely on traditional semiconductor techniques for related research. Delicate processes from locating the materials to electrode definition need to be well controlled. In this article, a universal fabrication protocol required in manufacturing nanoscale electronics, such as 2D quasi-heterojunction bipolar transistors (Q-HBT), and 2D back-gated transistors are demonstrated. This protocol includes the determination of material position, electron beam lithography (EBL), metal electrode definition, et al. A step by step narrative of the fabrication procedures for these devices are also presented. Furthermore, results show that each of the fabricated devices has achieved high performance with high repeatability. This work reveals a comprehensive description of process flow for preparing 2D nano-electronics, enables the research groups to access this information, and pave the way toward future electronics.

原文英語
文章編號e57885
期刊Journal of Visualized Experiments
2018
發行號138
DOIs
出版狀態已發佈 - 2018 八月 28

ASJC Scopus subject areas

  • 神經科學 (全部)
  • 化學工程 (全部)
  • 生物化學、遺傳與分子生物學 (全部)
  • 免疫學與微生物學 (全部)

指紋

深入研究「A standard and reliable method to fabricate two-dimensional nanoelectronics」主題。共同形成了獨特的指紋。

引用此