A simple method to fabricate single electron devices

Yi Pin Fang*, Ya Chang Chou, Shu Fen Hu, Gwo Jen Hwang

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A simple method, based on overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate nano-structure containing narrow constrictions. From the appropriately designed electron beam process, the electron dosage in the overlapping region is just above the threshold exposure dosage of the negative electronbeam resist. A Si-based nano-dot with two narrow tunnel junctions called single electron transistor was formed after dry etching and thermal oxidation process since the overlapping region is much narrower than the diameter of the nano-dot. The electric characteristic of the SET was found to be consistent with the expected behavior of electron transport through a gated quantum dot. Also, The characteristic phase diagrams of double dot structure were obtained by independently sweeping two gates. The honeycomb lattice of the conductance resonances in the phase diagram was modeled using a capacitance equivalent circuit and the electronic behavior of the double dot device was discussed from measured charging diagram comparing with the model.

原文英語
主出版物標題2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
頁面83-86
頁數4
出版狀態已發佈 - 2004 十二月 1
事件2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW - , 臺灣
持續時間: 2004 九月 92004 九月 10

出版系列

名字2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW

其他

其他2004 Semiconductor Manufacturing Technology Workshop Proceedings, SMTW
國家/地區臺灣
期間2004/09/092004/09/10

ASJC Scopus subject areas

  • 工程 (全部)

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