TY - GEN
T1 - A simple method for fabricating silicon single electron devices for metrology applications
AU - Hwang, G. J.
AU - Huang, C. F.
AU - Fang, Y. P.
AU - Chou, Y. C.
AU - Hu, S. F.
PY - 2004
Y1 - 2004
N2 - A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.
AB - A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.
UR - http://www.scopus.com/inward/record.url?scp=48349148549&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48349148549&partnerID=8YFLogxK
U2 - 10.1109/CPEM.2004.305355
DO - 10.1109/CPEM.2004.305355
M3 - Conference contribution
AN - SCOPUS:48349148549
SN - 0780384938
SN - 9780780384934
T3 - CPEM Digest (Conference on Precision Electromagnetic Measurements)
SP - 548
EP - 549
BT - 2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
T2 - 2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
Y2 - 27 June 2004 through 2 July 2004
ER -