A simple method for fabricating silicon single electron devices for metrology applications

G. J. Hwang, C. F. Huang, Y. P. Fang, Y. C. Chou, Shu-Fen Hu

研究成果: 書貢獻/報告類型會議論文篇章

摘要

A simple method, based on overlapping the dosage distribution of the discretely electron beam written nanodots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot.

原文英語
主出版物標題2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
頁面548-549
頁數2
DOIs
出版狀態已發佈 - 2004 十二月 1
事件2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004 - London, 英国
持續時間: 2004 六月 272004 七月 2

出版系列

名字CPEM Digest (Conference on Precision Electromagnetic Measurements)
ISSN(列印)0589-1485

其他

其他2004 Conference on Precision Electromagnetic Measurements Digest, CPEM 2004
國家/地區英国
城市London
期間2004/06/272004/07/02

ASJC Scopus subject areas

  • 電子、光磁材料
  • 儀器
  • 電氣與電子工程

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