摘要
We present a simple approach that could help quantitative phase field simulation for dilute-alloy solidification. The proposed approach mends the solute trapping problem by using a simple interface model (SIM), which requires only one free parameter. To test the feasibility of this model, a free dendritic growth from a small nucleus is simulated, and a good agreement with the anti-trapping current (ATC) model [Karma, Phys. Rev. Lett. 87 (2001) 115701] is obtained. By further studying the solute trapping effect during directional solidification, we find that the results give, with this model, a good thermodynamic consistence without solute trapping over two-order increment of the solidification speed and the interface thickness. Good agreement with the classical theory is obtained as well.
原文 | 英語 |
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頁(從 - 到) | 515-524 |
頁數 | 10 |
期刊 | Journal of Crystal Growth |
卷 | 282 |
發行號 | 3-4 |
DOIs | |
出版狀態 | 已發佈 - 2005 9月 1 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 凝聚態物理學
- 無機化學
- 材料化學