A simple approach toward quantitative phase field simulation for dilute-alloy solidification

C. J. Shih, M. H. Lee, C. W. Lan*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

We present a simple approach that could help quantitative phase field simulation for dilute-alloy solidification. The proposed approach mends the solute trapping problem by using a simple interface model (SIM), which requires only one free parameter. To test the feasibility of this model, a free dendritic growth from a small nucleus is simulated, and a good agreement with the anti-trapping current (ATC) model [Karma, Phys. Rev. Lett. 87 (2001) 115701] is obtained. By further studying the solute trapping effect during directional solidification, we find that the results give, with this model, a good thermodynamic consistence without solute trapping over two-order increment of the solidification speed and the interface thickness. Good agreement with the classical theory is obtained as well.

原文英語
頁(從 - 到)515-524
頁數10
期刊Journal of Crystal Growth
282
發行號3-4
DOIs
出版狀態已發佈 - 2005 九月 1
對外發佈

ASJC Scopus subject areas

  • 凝聚態物理學
  • 無機化學
  • 材料化學

指紋

深入研究「A simple approach toward quantitative phase field simulation for dilute-alloy solidification」主題。共同形成了獨特的指紋。

引用此