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A silicon nanowire with a Coulomb blockade effect at room temperature

  • S. F. Hu
  • , W. Z. Wong
  • , S. S. Liu
  • , Y. C. Wu
  • , C. L. Sung
  • , T. Y. Huang
  • , T. J. Yang

研究成果: 雜誌貢獻期刊論文同行評審

26   !!Link opens in a new tab 引文 斯高帕斯(Scopus)

摘要

An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.

原文英語
頁(從 - 到)736-739
頁數4
期刊Advanced Materials
14
發行號10
DOIs
出版狀態已發佈 - 2002 5月 17
對外發佈

ASJC Scopus subject areas

  • 一般材料科學
  • 材料力學
  • 機械工業

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