摘要
An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 736-739 |
| 頁數 | 4 |
| 期刊 | Advanced Materials |
| 卷 | 14 |
| 發行號 | 10 |
| DOIs | |
| 出版狀態 | 已發佈 - 2002 5月 17 |
| 對外發佈 | 是 |
ASJC Scopus subject areas
- 一般材料科學
- 材料力學
- 機械工業
指紋
深入研究「A silicon nanowire with a Coulomb blockade effect at room temperature」主題。共同形成了獨特的指紋。引用此
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