A Self-align Gate-last Resistive Gate Switching FinFET Nonvolatile Memory Feasible for Embedded Applications

W. Y. Yang, E. R. Hsieh, C. H. Cheng, Steve S. Chung

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this work, we propose a FinFET resistance gate switching nonvolatile memory (RG-FinFET) which comprises a simple RRAM structure on top of a HKMG FinFET gate. The readout is taken from the FinFET VT or ID and its operation is based on the resistance switching instead of the conventional charge storage. The SET/RESET operation of the memory is made by the edge tunneling between top gate and source. The RG-FinFET shows ultra-low switching current, FORMing-free and ultra-fast SET/RESET speed. Comparing to conventional drain-type 1T1R, proposed gate-type 1T features low power consumption, smaller size in layout and larger window. It also exhibits excellent reliabilities, e.g., a very large window with highly stable retention, no sneak path, immunity to disturbances etc. Moreover, RG-FinFET is fully compatible with the logic CMOS technology and well-suited for NOR type memories, showing great potential for the future embedded applications.

原文英語
主出版物標題2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面23-24
頁數2
ISBN(電子)9781728197357
DOIs
出版狀態已發佈 - 2020 六月
事件2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020 - Honolulu, 美国
持續時間: 2020 六月 132020 六月 14

出版系列

名字2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020

會議

會議2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
國家/地區美国
城市Honolulu
期間2020/06/132020/06/14

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程
  • 電子、光磁材料

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