A resultant stress effect of contact etching stop layer and geometrical designs of poly gate on Nanoscaled nMOSFETs with a Si1-xGex channel

Chang Chun Lee*, Chuan Hsi Liu, Zih Han Chen, Tzai Liang Tzeng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this research, an n-type metal-oxide-semiconductor field effect transistor (nMOSFET) device with a SiGe channel exerted by the combination of a contact etching stop layer (CESL) and silicon germanium (Si1-xGex) channel stressors is proposed. To explore the foregoing mechanical effect on the stress distribution of nMOSFETs within the channel region, a process-oriented simulated technique is adopted for the concerned nMOSFET device. The loading sources are a 1.1 GPa tensile CESL (t-CESL) and a SiGe channel structure constructed with 0%, 22.5%, and 25%, germanium (Ge) mole fractions. The results of the simulation show that the stress components of the Si1-xGex channel evidently increase when the Ge mole fraction within a Si1-xGex layer is increased. A pulling force exerted on the protruding gate structure by the CESL layer that causes dominant bending deformation and channel stress variation behaviors is a major reason for this phenomenon. Therefore, the degree of bending effect caused by the protruding gate structure is concluded as being the key to determining the trends and stress magnitudes of the Si1-xGex device channel.

原文英語
頁(從 - 到)2173-2178
頁數6
期刊Journal of Nanoscience and Nanotechnology
15
發行號3
DOIs
出版狀態已發佈 - 2015 1月 1

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 生物醫學工程
  • 材料科學(全部)
  • 凝聚態物理學

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