A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

H. W. Cheng, E. R. Hsieh, Z. H. Huang, C. H. Chuang, C. H. Chen, F. L. Li, Y. M. Lo, C. H. Liu, Steve S. Chung

研究成果: 書貢獻/報告類型會議貢獻

摘要

A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named Rewritable One-time- programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of- the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.

原文英語
主出版物標題2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538648254
DOIs
出版狀態已發佈 - 2018 七月 3
對外發佈Yes
事件2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, 臺灣
持續時間: 2018 四月 162018 四月 19

出版系列

名字2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

會議

會議2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
國家臺灣
城市Hsinchu
期間18/4/1618/4/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

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    Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H., & Chung, S. S. (2018). A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications. 於 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (頁 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403852