A miniature Q-band low noise amplifier using 0.13-μm CMOS technology

Jeng-Han Tsai*, Wei Chien Chen, To Po Wang, Tian Wei Huang, Huei Wang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

51 引文 斯高帕斯(Scopus)

摘要

A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20 dB at 43 GHz with a compact chip size of 0.525 mm 2. The 3-dB frequency bandwidth ranges from 34 to 44 GHz and the minimum noise figure is 6.3 dB at 41 GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.

原文英語
文章編號1637484
頁(從 - 到)327-329
頁數3
期刊IEEE Microwave and Wireless Components Letters
16
發行號6
DOIs
出版狀態已發佈 - 2006 六月

ASJC Scopus subject areas

  • 凝聚態物理學
  • 電氣與電子工程

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