A Metal–Insulator Transition of the Buried MnO2Monolayer in Complex Oxide Heterostructure

Heng Jui Liu, Jheng Cyuan Lin, Yue Wen Fang, Jing Ching Wang, Bo Chao Huang, Xiang Gao, Rong Huang, Philip R. Dean, Peter D. Hatton, Yi Ying Chin, Hong Ji Lin, Chien Te Chen, Yuichi Ikuhara, Ya Ping Chiu, Chia Seng Chang, Chun Gang Duan, Qing He, Ying Hao Chu

研究成果: 雜誌貢獻文章

10 引文 斯高帕斯(Scopus)


Researchers conducted a study to create a single metal-oxide plane as a 2D monolayer through interface engineering. This 2D oxide monolayer could be obtained at the heterostructure similar to the case of a single-unit-cell manganite ultrathin film sandwiched between two neighboring complex oxides. This study delivered a generic approach to study the dimensional confinement of strongly correlated electron systems and provides a direction to design new electronic devices. The MnO2 monolayer was chosen as a model system, since the mixture of Mn4+ and Mn3+ cations in these oxide planes dominated the novel physical phenomena of colossal magnetoresistance manganites.

頁(從 - 到)9142-9151
期刊Advanced Materials
出版狀態已發佈 - 2016 一月 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Liu, H. J., Lin, J. C., Fang, Y. W., Wang, J. C., Huang, B. C., Gao, X., Huang, R., Dean, P. R., Hatton, P. D., Chin, Y. Y., Lin, H. J., Chen, C. T., Ikuhara, Y., Chiu, Y. P., Chang, C. S., Duan, C. G., He, Q., & Chu, Y. H. (2016). A Metal–Insulator Transition of the Buried MnO2Monolayer in Complex Oxide Heterostructure. Advanced Materials, 28(41), 9142-9151. https://doi.org/10.1002/adma.201602281