A low operating voltage IGZO TFT using LaLuO3 gate dielectric

Kun I. Chou; Hsiao Hsuan Hsu; Chun Hu Cheng; Kai Yu Lee; Shang Rong Li; Albert Chin

doi:10.1109/EDSSC.2013.6628219

A low operating voltage IGZO TFT using LaLuO₃ gate dielectric

Kun I. Chou
, Hsiao Hsuan Hsu
, Chun Hu Cheng
, Kai Yu Lee
, Shang Rong Li
, Albert Chin

機電工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

2 引文斯高帕斯（Scopus）

摘要

This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO₃ into an IGZO TFT. The resulting LaLuO₃/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μ_FE) of 6.6 cm²/V-s. The low V_T and small SS allow device operation voltage below 2.5 V.

原文	英語
主出版物標題	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628219
出版狀態	已發佈 - 2013
事件	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, 香港持續時間: 2013 6月 3 → 2013 6月 5

出版系列

名字	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

其他

其他	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
國家/地區	香港
城市	Hong Kong
期間	2013/06/03 → 2013/06/05

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

存取文件

10.1109/EDSSC.2013.6628219

其它文件與鏈接

引用此

Chou, K. I., Hsu, H. H., Cheng, C. H., Lee, K. Y., Li, S. R., & Chin, A. (2013). A low operating voltage IGZO TFT using LaLuO₃ gate dielectric. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 文章 6628219 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628219

A low operating voltage IGZO TFT using LaLuO₃ gate dielectric. / Chou, Kun I.; Hsu, Hsiao Hsuan; Cheng, Chun Hu 等.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628219 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Chou, KI, Hsu, HH, Cheng, CH, Lee, KY, Li, SR & Chin, A 2013, A low operating voltage IGZO TFT using LaLuO₃ gate dielectric. 於 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628219, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 香港, 2013/06/03. https://doi.org/10.1109/EDSSC.2013.6628219

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title = "A low operating voltage IGZO TFT using LaLuO3 gate dielectric",

abstract = "This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.",

keywords = "InGaZnO, LaLuO, thin film transistor (TFT)",

author = "Chou, \{Kun I.\} and Hsu, \{Hsiao Hsuan\} and Cheng, \{Chun Hu\} and Lee, \{Kai Yu\} and Li, \{Shang Rong\} and Albert Chin",

year = "2013",

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AU - Chin, Albert

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N2 - This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.

AB - This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-K lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-K LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The low VT and small SS allow device operation voltage below 2.5 V.

KW - InGaZnO

KW - LaLuO

KW - thin film transistor (TFT)

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