摘要
A Ku-band 3-bit switch-type phase shifter with low insertion loss, low magnitude variation, and low rms phase error is designed and fabricated on 0.15-μm pHEMT process. For all eight states, the insertion loss is 6.5±1.5 dB from 10-14 GHz and the input return loss is >8.5 dB over 10-14 GHz. The phase shifter achieves a rms phase error of 2.2° and a rms amplitude error of 0.37 dB at 12 GHz with total chip size of 1.5 ×1 mm2.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 771-774 |
| 頁數 | 4 |
| 期刊 | Microwave and Optical Technology Letters |
| 卷 | 57 |
| 發行號 | 4 |
| DOIs | |
| 出版狀態 | 已發佈 - 2015 4月 1 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 電氣與電子工程
指紋
深入研究「A Ku-band 3-bit phase shifter MMIC using GaAs phemt technology for phased array system」主題。共同形成了獨特的指紋。引用此
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS