@inproceedings{30e0d545f028460b9003da844c250b9d,
title = "A Ka-band sub-harmonically pumped mixer using diode-connected MOSFET for 5G mm-wave transceivers",
abstract = "A Ka-band (27~40-GHz) sub-harmonically pumped mixer (SPM) fabricated in 180-nm CMOS technology is demonstrated for 5G mm-wave transceivers in this paper. The proposed SPM is composed of anti-parallel gate-source connected FET diode pair (APDP). The SPM measuring 0.48 mm2 demonstrates a conversion-gain response of-16.8 -12.4 dB for both up- and down-conversion over 27-40 GHz, the required LO frequency from 13.5 to 20 GHz, and a high 2LO-to-RF isolation of 60-80 dB.",
keywords = "5G, APDP, CMOS, Diode-connected, Ka-band, SPM, Subharmonic mixer, Up/down-converter",
author = "Tsai, {Tsung Ching} and Ian Huang and Tsai, {Jeng Han} and Abdulelah Alshehri and Mazen Almalki and Abdulhamid Sayed and Huang, {Tian Wei}",
note = "Publisher Copyright: {\textcopyright} 2018 IEICE; 30th Asia-Pacific Microwave Conference, APMC 2018 ; Conference date: 06-11-2018 Through 09-11-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.23919/APMC.2018.8617647",
language = "English",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "488--490",
booktitle = "2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings",
}