A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang; Pei Chin Chiu; Jeng Han Tsai; Hui Hsin Sun; Yun Yue Hsieh; Zhi Jie Zeng; Kun Lin Lu; Chih Peng Lin; Bo Chin Wang; Sheng Chun Wang; Chin Fu Lin

A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang, Pei Chin Chiu, Jeng Han Tsai^*, Hui Hsin Sun, Yun Yue Hsieh, Zhi Jie Zeng, Kun Lin Lu, Chih Peng Lin, Bo Chin Wang, Sheng Chun Wang, Chin Fu Lin

^*此作品的通信作者

電機工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

摘要

In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, P_out (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

原文	英語
出版狀態	已發佈 - 2019
事件	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, 美国持續時間: 2019 4月 29 → 2019 5月 2

會議

會議	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
國家/地區	美国
城市	Minneapolis
期間	2019/04/29 → 2019/05/02

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

其它文件與鏈接

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Chang, C. M., Chiu, P. C., Tsai, J. H., Sun, H. H., Hsieh, Y. Y., Zeng, Z. J., Lu, K. L., Lin, C. P., Wang, B. C., Wang, S. C., & Lin, C. F. (2019). A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper. 論文發表於 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, 美国.

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title = "A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper",

abstract = "In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.",

keywords = "0.15μm, DUV volume production, Yield",

author = "Chang, {Chao Min} and Chiu, {Pei Chin} and Tsai, {Jeng Han} and Sun, {Hui Hsin} and Hsieh, {Yun Yue} and Zeng, {Zhi Jie} and Lu, {Kun Lin} and Lin, {Chih Peng} and Wang, {Bo Chin} and Wang, {Sheng Chun} and Lin, {Chin Fu}",

note = "Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

language = "English",

}

TY - CONF

T1 - A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

AU - Chang, Chao Min

AU - Chiu, Pei Chin

AU - Tsai, Jeng Han

AU - Sun, Hui Hsin

AU - Hsieh, Yun Yue

AU - Zeng, Zhi Jie

AU - Lu, Kun Lin

AU - Lin, Chih Peng

AU - Wang, Bo Chin

AU - Wang, Sheng Chun

AU - Lin, Chin Fu

PY - 2019

Y1 - 2019

N2 - In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

AB - In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

KW - 0.15μm

KW - DUV volume production

KW - Yield

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UR - http://www.scopus.com/inward/citedby.url?scp=85066989299&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:85066989299

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

摘要

會議

ASJC Scopus subject areas

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