In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.
|出版狀態||已發佈 - 2019|
|事件||2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, 美国|
持續時間: 2019 4月 29 → 2019 5月 2
|會議||2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019|
|期間||2019/04/29 → 2019/05/02|
ASJC Scopus subject areas