A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang, Pei Chin Chiu, Jeng Han Tsai*, Hui Hsin Sun, Yun Yue Hsieh, Zhi Jie Zeng, Kun Lin Lu, Chih Peng Lin, Bo Chin Wang, Sheng Chun Wang, Chin Fu Lin

*此作品的通信作者

研究成果: 會議貢獻類型會議論文同行評審

摘要

In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

原文英語
出版狀態已發佈 - 2019
事件2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, 美国
持續時間: 2019 四月 292019 五月 2

會議

會議2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
國家/地區美国
城市Minneapolis
期間2019/04/292019/05/02

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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