A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang, Pei Chin Chiu, Jeng Han Tsai, Hui Hsin Sun, Yun Yue Hsieh, Zhi Jie Zeng, Kun Lin Lu, Chih Peng Lin, Bo Chin Wang, Sheng Chun Wang, Chin Fu Lin

研究成果: 會議貢獻類型

摘要

In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

原文英語
出版狀態已發佈 - 2019 一月 1
事件2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, 美国
持續時間: 2019 四月 292019 五月 2

會議

會議2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
國家美国
城市Minneapolis
期間19/4/2919/5/2

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • 引用此

    Chang, C. M., Chiu, P. C., Tsai, J. H., Sun, H. H., Hsieh, Y. Y., Zeng, Z. J., Lu, K. L., Lin, C. P., Wang, B. C., Wang, S. C., & Lin, C. F. (2019). A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper. 論文發表於 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, 美国.