@inproceedings{4faf81e60232485bb87324a451fefdfe,
title = "A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications",
abstract = "This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth.",
keywords = "gain enhancement, layout, millimeter wave (MMW)), power amplifier",
author = "Chuang, {Kai Jie} and Bai, {Wei Ting} and Chen, {Yu Chun} and Lin, {Wen Jie} and Tsai, {Jeng Han} and Huang, {Tian Wei}",
note = "Funding Information: The 28-nm process and chips were fabricated by Taiwan Semiconductor Manufacturing Company (TSMC). Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2021",
month = aug,
day = "25",
doi = "10.1109/RFIT52905.2021.9565301",
language = "English",
series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
}