A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng

doi:10.1109/LED.2013.2258455

A flexible IGZO thin-film transistor with stacked TiO₂-based dielectrics fabricated at room temperature

Hsiao Hsuan Hsu
, Chun Yen Chang
, Chun Hu Cheng

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

114 引文斯高帕斯（Scopus）

摘要

This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO₂/TiO₂/SiO ₂ (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm²/Vs, and good I_ON/I _OFF ratio of 6.7× 10⁵, which have the potential for the application of high-resolution flexible display.

原文	英語
文章編號	6515620
頁（從 - 到）	768-770
頁數	3
期刊	IEEE Electron Device Letters
卷	34
發行號	6
DOIs	https://doi.org/10.1109/LED.2013.2258455
出版狀態	已發佈 - 2013

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

存取文件

10.1109/LED.2013.2258455

其它文件與鏈接

引用此

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title = "A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature",

abstract = "This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.",

keywords = "High-κ, TiO, indium-gallium-zinc oxide (IGZO), thin-film transistor (TFT)",

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AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

PY - 2013

Y1 - 2013

N2 - This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.

AB - This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.

KW - High-κ

KW - TiO

KW - indium-gallium-zinc oxide (IGZO)

KW - thin-film transistor (TFT)

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JF - IEEE Electron Device Letters

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A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

A flexible IGZO thin-film transistor with stacked TiO₂-based dielectrics fabricated at room temperature