A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng

研究成果: 雜誌貢獻期刊論文同行評審

86 引文 斯高帕斯(Scopus)

摘要

This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.

原文英語
文章編號6515620
頁(從 - 到)768-770
頁數3
期刊IEEE Electron Device Letters
34
發行號6
DOIs
出版狀態已發佈 - 2013 六月 3

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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