A first principles study of H2S adsorption and decomposition on a Ge(100) surface

Tsung Fan Teng, Santhanamoorthi Nachimuthu, Wei-Hsiu Hung, Jyh Chiang Jiang

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

摘要

We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H2S on a Ge(100) surface. There are four reaction paths proposed for the decomposition of adsorbed H2S on a Ge(100) surface and the corresponding structural conformations are studied extensively. The present study shows two new possible products and a detailed reaction mechanism for H2S adsorption on a Ge(100) surface and the results are compared with our previous study of H2S adsorption on a Si(100) surface (J. Phy. Chem. C, 115, 2011, 19203). The density of states (DOS) and electron density difference (EDD) analyses are used to illustrate the interaction between S-containing species and surface Ge atoms. This journal is

原文英語
頁(從 - 到)3825-3832
頁數8
期刊RSC Advances
5
發行號5
DOIs
出版狀態已發佈 - 2015 一月 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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