摘要
A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation, and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K.
原文 | 英語 |
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頁(從 - 到) | 93-97 |
頁數 | 5 |
期刊 | IEEE Transactions on Nanotechnology |
卷 | 3 |
發行號 | 1 SPEC. ISS. |
DOIs | |
出版狀態 | 已發佈 - 2004 3月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電腦科學應用
- 電氣與電子工程