A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator Nanowire

Shu-Fen Hu*, Yung Chun Wu, Chin Lung Sung, Chun Yen Chang, Tiao Yuan Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation, and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K.

原文英語
頁(從 - 到)93-97
頁數5
期刊IEEE Transactions on Nanotechnology
3
發行號1 SPEC. ISS.
DOIs
出版狀態已發佈 - 2004 三月 1

ASJC Scopus subject areas

  • 電腦科學應用
  • 電氣與電子工程

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