A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin; Po Shun Huang; Jen Hao Cheng; Jeng Han Tsai; Hamed Alsuraisry; Tian Wei Huang

doi:10.1002/mop.31220

A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin^*
, Po Shun Huang
, Jen Hao Cheng
, Jeng Han Tsai
, Hamed Alsuraisry
, Tian Wei Huang

^*此作品的通信作者

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, P_sat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm². This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm²) with other state-of-the-art class-E PAs at higher frequency.

原文	英語
頁（從 - 到）	1672-1675
頁數	4
期刊	Microwave and Optical Technology Letters
卷	60
發行號	7
DOIs	https://doi.org/10.1002/mop.31220
出版狀態	已發佈 - 2018 7月

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1002/mop.31220

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引用此

@article{b5434bb45eeb48eb9161678cf8f209ad,

title = "A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS",

abstract = "In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31\% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.",

keywords = "CMOS, class-E, concurrent, dual-band, impedance matching network, power amplifier (PA)",

author = "Lin, \{Wen Jie\} and Huang, \{Po Shun\} and Cheng, \{Jen Hao\} and Tsai, \{Jeng Han\} and Hamed Alsuraisry and Huang, \{Tian Wei\}",

note = "Publisher Copyright: {\textcopyright} 2018 Wiley Periodicals, Inc.",

year = "2018",

month = jul,

doi = "10.1002/mop.31220",

language = "English",

volume = "60",

pages = "1672--1675",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons Inc.",

number = "7",

}

TY - JOUR

T1 - A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

AU - Lin, Wen Jie

AU - Huang, Po Shun

AU - Cheng, Jen Hao

AU - Tsai, Jeng Han

AU - Alsuraisry, Hamed

AU - Huang, Tian Wei

PY - 2018/7

Y1 - 2018/7

N2 - In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

AB - In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

KW - CMOS

KW - class-E

KW - concurrent

KW - dual-band

KW - impedance matching network

KW - power amplifier (PA)

UR - https://www.scopus.com/pages/publications/85046533347

UR - https://www.scopus.com/pages/publications/85046533347#tab=citedBy

U2 - 10.1002/mop.31220

DO - 10.1002/mop.31220

M3 - Article

AN - SCOPUS:85046533347

SN - 0895-2477

VL - 60

SP - 1672

EP - 1675

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 7

ER -

A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

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ASJC Scopus subject areas

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