@article{b5434bb45eeb48eb9161678cf8f209ad,
title = "A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS",
abstract = "In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.",
keywords = "class-E, CMOS, concurrent, dual-band, impedance matching network, power amplifier (PA)",
author = "Lin, {Wen Jie} and Huang, {Po Shun} and Cheng, {Jen Hao} and Tsai, {Jeng Han} and Hamed Alsuraisry and Huang, {Tian Wei}",
note = "Funding Information: Ministry of Science and Technology (MOST), Grant/Award Number: MOST 103-2221-E-002-053, MOST 103-2221-E-002-051, MOST103-2218-E-002-031, Contract NSC 102-2221-E-002-038-MY3, 102R8908, and 104R890834 Publisher Copyright: {\textcopyright} 2018 Wiley Periodicals, Inc.",
year = "2018",
month = jul,
doi = "10.1002/mop.31220",
language = "English",
volume = "60",
pages = "1672--1675",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "7",
}