A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin*, Po Shun Huang, Jen Hao Cheng, Jeng Han Tsai, Hamed Alsuraisry, Tian Wei Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

原文英語
頁(從 - 到)1672-1675
頁數4
期刊Microwave and Optical Technology Letters
60
發行號7
DOIs
出版狀態已發佈 - 2018 七月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

指紋

深入研究「A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS」主題。共同形成了獨特的指紋。

引用此