A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN

J. M. Hwang*, J. T. Hsieh, H. L. Hwang, W. H. Hung

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

指紋

深入研究「A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Chemical Compounds

Physics & Astronomy