TY - JOUR
T1 - A damage-reduced process revealed by photoluminescence in photoelectrochemical etching GaN
AU - Hwang, J. M.
AU - Hsieh, J. T.
AU - Hwang, H. L.
AU - Hung, W. H.
N1 - Funding Information:
Some samples was provided by Opto-Electronics and System Laboratories, Industrial Technology Research Institute. Financial support was provided by the and National Science Council of Republic of China (Contract No. NSC 88-2215-E-007-011).
PY - 2000
Y1 - 2000
N2 - Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of V0il-O, N (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.
AB - Photoelectrochemical (PEC) etching technique has been proven to be an effective method to etch GaN. Despite its success, investigations on etching-induced damage are still scare. In this work, the damage induced by PEC etching of GaN in KOH electrolyte was studied. Photoluminescence (PL) spectroscopy was used to explore the origin of etching-induced damaged layer. From the variable temperature PL measurements, the origin of etching-induced damage was attributed to be the defect complex of V0il-O, N (gallium vacancy bonds to oxygeon on nitrogen antisite). With determination of the defect origin, the electronic transition in the etch damage-related yellow luminescence (YL) band was suggested to be deep donor-like state to shallow-acceptor transition. In addition, a post-treatment method with boiled KOH chemical etching was developed to remove the thin damaged layer. In this method, crystallographic etching characteristics of boiled KOH was observed to assist in the formation of smooth sidewall facets. As revealed by the reduction of yellow luminescence, we propose this novel technique as a near damage-free etching method.
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U2 - 10.1557/s1092578300005202
DO - 10.1557/s1092578300005202
M3 - Article
AN - SCOPUS:3242745191
SN - 0272-9172
VL - 595
SP - W11731-W11736
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
IS - SUPPL. 1
ER -