摘要
The gate current of MOS tunneling diodes biased at inversion region with different substrate doping is investigated. For p-type substrate (1-5 Ω-cm) devices, the tunneling diode works in the deep depletion region and the inversion current is dominated by the thermal generation rate of minority electrons via traps at Si/SiO 2 interface and in the deep depletion region. The activation energy is approximately equal to half of the silicon bandgap independent of gate voltage. For devices on p + substrate (0.01-0.05 Ω-cm), the band-to-traps tunneling and band-to-band tunneling are the dominating current components at inversion bias, and reveal a strong field dependence and a weak temperature dependence. The band-to-traps and band-to-band current components are even more significant in the devices on the p ++ substrate (0.001-0.0025 Ω-cm). Finally, the effects of temperature and light illumination on inversion current of MOS tunneling diodes will be also discussed.
原文 | 英語 |
---|---|
頁(從 - 到) | 2125-2130 |
頁數 | 6 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 48 |
發行號 | 9 |
DOIs | |
出版狀態 | 已發佈 - 2001 9月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 電氣與電子工程