@article{0c055b7f7fc24d70810fe84d2f71a208,
title = "A 86 to 108 GHz amplifier in 90 nm CMOS",
abstract = "This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.",
keywords = "Amplifier, CMOS, Monolithic microwave integrated circuit (MMIC)",
author = "Jiang, {Yu Sian} and Tsai, {Zuo Min} and Tsai, {Jeng Han} and Chen, {Hsien Te} and Huei Wang",
note = "Funding Information: Manuscript received May 27, 2007; revised October 22, 2007. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2752-E-002-003-PAE, NSC 95-2219-E-002-006, and NSC 95-2219-E-002-009, and by the Excellent Research Projects of National Taiwan University (95R0062-AE00-00).",
year = "2008",
month = feb,
doi = "10.1109/LMWC.2007.915132",
language = "English",
volume = "18",
pages = "124--126",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}