A 86 to 108 GHz amplifier in 90 nm CMOS

Yu Sian Jiang, Zuo Min Tsai, Jeng-Han Tsai, Hsien Te Chen, Huei Wang

研究成果: 雜誌貢獻文章同行評審

42 引文 斯高帕斯(Scopus)

摘要

This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

原文英語
頁(從 - 到)124-126
頁數3
期刊IEEE Microwave and Wireless Components Letters
18
發行號2
DOIs
出版狀態已發佈 - 2008 二月

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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