A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng Han Tsai; Ruei An Chang; Ji Yang Lin

doi:10.1109/SiRF.2014.6828515

A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng Han Tsai, Ruei An Chang, Ji Yang Lin

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

11 引文斯高帕斯（Scopus）

摘要

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (P_sat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum P_sat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP_1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

原文	英語
主出版物標題	SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
發行者	IEEE Computer Society
頁面	77-79
頁數	3
ISBN（列印）	9781479915231
DOIs	https://doi.org/10.1109/SiRF.2014.6828515
出版狀態	已發佈 - 2014
事件	2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014 - Newport Beach, CA, 美国持續時間: 2014 1月 19 → 2014 1月 23

出版系列

名字	SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

其他

其他	2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014
國家/地區	美国
城市	Newport Beach, CA
期間	2014/01/19 → 2014/01/23

ASJC Scopus subject areas

硬體和架構
電氣與電子工程

存取文件

10.1109/SiRF.2014.6828515

其它文件與鏈接

引用此

Tsai, J. H., Chang, R. A., & Lin, J. Y. (2014). A 69-81 GHz power amplifier using 90nm CMOS technology. 於 SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (頁 77-79). 文章 6828515 (SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). IEEE Computer Society. https://doi.org/10.1109/SiRF.2014.6828515

A 69-81 GHz power amplifier using 90nm CMOS technology. / Tsai, Jeng Han; Chang, Ruei An; Lin, Ji Yang.
SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. IEEE Computer Society, 2014. p. 77-79 6828515 (SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Tsai, JH, Chang, RA & Lin, JY 2014, A 69-81 GHz power amplifier using 90nm CMOS technology. 於 SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 6828515, SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE Computer Society, 頁 77-79, 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014, Newport Beach, CA, 美国, 2014/01/19. https://doi.org/10.1109/SiRF.2014.6828515

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abstract = "A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (Psat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum Psat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.",

keywords = "CMOS, E-band, Millimeter-wave (MMW), Power amplifier (PA)",

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A 69-81 GHz power amplifier using 90nm CMOS technology

摘要

出版系列

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ASJC Scopus subject areas

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