A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng-Han Tsai, Ruei An Chang, Ji Yang Lin

研究成果: 書貢獻/報告類型會議論文篇章

10 引文 斯高帕斯(Scopus)

摘要

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (Psat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum Psat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

原文英語
主出版物標題SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
發行者IEEE Computer Society
頁面77-79
頁數3
ISBN(列印)9781479915231
DOIs
出版狀態已發佈 - 2014 一月 1
事件2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014 - Newport Beach, CA, 美国
持續時間: 2014 一月 192014 一月 23

出版系列

名字SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

其他

其他2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014
國家/地區美国
城市Newport Beach, CA
期間2014/01/192014/01/23

ASJC Scopus subject areas

  • 硬體和架構
  • 電氣與電子工程

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