TY - GEN
T1 - A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications
AU - Tsai, Jeng Han
AU - Lin, Yu Hui
AU - Tsao, Yi Fan
AU - Wang, Yuan
AU - Desai, Arpan
AU - Chiu, Ping Hsun
AU - Hsu, Heng Tung
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.
AB - This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.
KW - Doherty power amplifier
KW - gallium nitride (GaN)
KW - high-electron-mobility transistor (HEMT)
KW - millimeter-wave
KW - V-band
UR - http://www.scopus.com/inward/record.url?scp=85186675720&partnerID=8YFLogxK
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U2 - 10.1109/APMC57107.2023.10439724
DO - 10.1109/APMC57107.2023.10439724
M3 - Conference contribution
AN - SCOPUS:85186675720
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 171
EP - 173
BT - 2023 Asia-Pacific Microwave Conference, APMC 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st Asia-Pacific Microwave Conference, APMC 2023
Y2 - 5 December 2023 through 8 December 2023
ER -