A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai*, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

原文英語
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面747-749
頁數3
DOIs
出版狀態已發佈 - 2012
對外發佈
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, 臺灣
持續時間: 2012 十二月 42012 十二月 7

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

其他

其他2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區臺灣
城市Kaohsiung
期間2012/12/042012/12/07

ASJC Scopus subject areas

  • 電氣與電子工程

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