A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

研究成果: 書貢獻/報告類型會議論文篇章

摘要

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

原文英語
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面747-749
頁數3
DOIs
出版狀態已發佈 - 2012
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, 臺灣
持續時間: 2012 十二月 42012 十二月 7

其他

其他2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區臺灣
城市Kaohsiung
期間2012/12/042012/12/07

ASJC Scopus subject areas

  • 電氣與電子工程

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