This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.
|主出版物標題||2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings|
|出版狀態||已發佈 - 2012|
|事件||2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, 臺灣|
持續時間: 2012 十二月 4 → 2012 十二月 7
|其他||2012 Asia-Pacific Microwave Conference, APMC 2012|
|期間||2012/12/04 → 2012/12/07|
ASJC Scopus subject areas