摘要
A 53-67 GHz wide locking range injection-locked frequency divider (ILFD) has been designed and fabricated using 0.13-μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption. Via a 0 dBm incident signal power, an input locking rage greater than 14 GHz (>23%) is achieved with 4 mW from supply voltage of 0.8 V. If the supply voltage further reduces to 0.6 V, the input locking rage is 6 GHz (10%) while consuming only 1.2 mW. Compared to previous reported works in high-speed CMOS FD, the presented ILFD achieves superior figure of merit (FOM). Without extra voltage control mechanisms to increase the locking range, this FD covers whole 57-64 GHz band is suitable for integration into a 60 GHz WPAN phase-locked loop system. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1386-1389, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25989
原文 | 英語 |
---|---|
頁(從 - 到) | 1386-1389 |
頁數 | 4 |
期刊 | Microwave and Optical Technology Letters |
卷 | 53 |
發行號 | 6 |
DOIs | |
出版狀態 | 已發佈 - 2011 6月 |
ASJC Scopus subject areas
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 電氣與電子工程