A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications

Jeng Han Tsai, Hong Wun Ou-Yang

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (Psat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.

原文英語
主出版物標題RWS 2014 - Proceedings
主出版物子標題2014 IEEE Radio and Wireless Symposium
發行者IEEE Computer Society
頁面130-132
頁數3
ISBN(列印)9781479921812
DOIs
出版狀態已發佈 - 2014 一月 1
事件2014 IEEE Radio and Wireless Symposium, RWS 2014 - Newport Beach, CA, 美国
持續時間: 2014 一月 192014 一月 22

出版系列

名字IEEE Radio and Wireless Symposium, RWS
ISSN(列印)2164-2958
ISSN(電子)2164-2974

其他

其他2014 IEEE Radio and Wireless Symposium, RWS 2014
國家美国
城市Newport Beach, CA
期間14/1/1914/1/22

    指紋

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication

引用此

Tsai, J. H., & Ou-Yang, H. W. (2014). A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications. 於 RWS 2014 - Proceedings: 2014 IEEE Radio and Wireless Symposium (頁 130-132). [6830155] (IEEE Radio and Wireless Symposium, RWS). IEEE Computer Society. https://doi.org/10.1109/RWS.2014.6830155