A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology

Hamed Alsuraisry, Teng Yuan Chang, Jeng Han Tsai, Tian Wei Huang

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.

原文英語
主出版物標題10th Global Symposium on Millimeter-Waves, GSMM 2017
編輯Kwok Kan So, Ka Fai Chan
發行者Institute of Electrical and Electronics Engineers Inc.
頁面85-86
頁數2
ISBN(電子)9781538640036
DOIs
出版狀態已發佈 - 2017 七月 6
事件10th Global Symposium on Millimeter-Waves, GSMM 2017 - Hong Kong, 香港
持續時間: 2017 五月 242017 五月 26

出版系列

名字10th Global Symposium on Millimeter-Waves, GSMM 2017

其他

其他10th Global Symposium on Millimeter-Waves, GSMM 2017
國家/地區香港
城市Hong Kong
期間2017/05/242017/05/26

ASJC Scopus subject areas

  • 電腦網路與通信
  • 儀器
  • 輻射

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