A 38-46 GHz MMIC Doherty power amplifier using post-distortion linearization

Jeng Han Tsai; Tian Wei Huang

doi:10.1109/LMWC.2007.895726

A 38-46 GHz MMIC Doherty power amplifier using post-distortion linearization

Jeng Han Tsai^*, Tian Wei Huang

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

50 引文斯高帕斯（Scopus）

摘要

This letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-μm GaAs HEMT process, achieves a small signal gain of 7 dB from 38 to 46 GHz with a compact chip size of 2 mm ². The saturation output power of the Doherty amplifier is 21.8 dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18 dB at 42 GHz compared with the balanced amplifier operation.

原文	英語
頁（從 - 到）	388-390
頁數	3
期刊	IEEE Microwave and Wireless Components Letters
卷	17
發行號	5
DOIs	https://doi.org/10.1109/LMWC.2007.895726
出版狀態	已發佈 - 2007 5月
對外發佈	是

ASJC Scopus subject areas

凝聚態物理學
電氣與電子工程

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10.1109/LMWC.2007.895726

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title = "A 38-46 GHz MMIC Doherty power amplifier using post-distortion linearization",

abstract = "This letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-μm GaAs HEMT process, achieves a small signal gain of 7 dB from 38 to 46 GHz with a compact chip size of 2 mm 2. The saturation output power of the Doherty amplifier is 21.8 dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18 dB at 42 GHz compared with the balanced amplifier operation.",

keywords = "Doherty amplifier, Millimeter-wave (MMW), Monolithic microwave integrated circuit (MMIC), Post-distortion",

author = "Tsai, {Jeng Han} and Huang, {Tian Wei}",

note = "Funding Information: Manuscript received September 21, 2006; revised January 5, 2007. This work was supported by the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, and NSC 93-2752-E-002-003-PAE and by WIN Semiconductors through the Chip Implementation Center (CIC), Taiwan, R.O.C.",

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PY - 2007/5

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N2 - This letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-μm GaAs HEMT process, achieves a small signal gain of 7 dB from 38 to 46 GHz with a compact chip size of 2 mm 2. The saturation output power of the Doherty amplifier is 21.8 dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18 dB at 42 GHz compared with the balanced amplifier operation.

AB - This letter describes the first demonstration of a fully integrated Doherty power amplifier (PA) monolithic microwave integrated circuit (MMIC) with post-distortion linearization at millimeter-wave (MMW) frequency band. The Doherty amplifier MMIC, using a 0.15-μm GaAs HEMT process, achieves a small signal gain of 7 dB from 38 to 46 GHz with a compact chip size of 2 mm 2. The saturation output power of the Doherty amplifier is 21.8 dBm. The similar topology between the Doherty amplifier and post-distortion linearization makes it possible to improve efficiency and linearity simultaneously in MMW PA designs. After gate bias optimization of the main and peaking amplifier, the drain efficiency improved 6% at 6-dB output back-off and the inter-modulation distortion (IMD) of quasi Doherty amplifier can be improved 18 dB at 42 GHz compared with the balanced amplifier operation.

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KW - Millimeter-wave (MMW)

KW - Monolithic microwave integrated circuit (MMIC)

KW - Post-distortion

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A 38-46 GHz MMIC Doherty power amplifier using post-distortion linearization

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