@inproceedings{1c2e369576f94ca28bb6aa4ed4ae84d1,
title = "A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process",
abstract = "A 37-40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28% at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is 13.5 dB. The chip size is 2.03 × 1.03 mm2.",
keywords = "MMIC, fifth-generation (5G), phased array transceiver, power amplifier (PA)",
author = "Tsai, {Jeng Han} and Cheng, {Yi Chien} and Hung, {Chuan Chi} and Chiang, {Kun Chan} and Li, {Wei Teung}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 7th IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017 ; Conference date: 03-09-2017 Through 06-09-2017",
year = "2017",
month = dec,
day = "14",
doi = "10.1109/ICCE-Berlin.2017.8210597",
language = "English",
series = "IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin",
publisher = "IEEE Computer Society",
pages = "85--87",
booktitle = "2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017",
}