A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process

Jeng Han Tsai, Yi Chien Cheng, Chuan Chi Hung, Kun Chan Chiang, Wei Teung Li

研究成果: 書貢獻/報告類型會議論文篇章

5 引文 斯高帕斯(Scopus)

摘要

A 37-40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28% at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is 13.5 dB. The chip size is 2.03 × 1.03 mm2.

原文英語
主出版物標題2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017
發行者IEEE Computer Society
頁面85-87
頁數3
ISBN(電子)9781509040148
DOIs
出版狀態已發佈 - 2017 十二月 14
事件7th IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017 - Berlin, 德国
持續時間: 2017 九月 32017 九月 6

出版系列

名字IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin
2017-September
ISSN(列印)2166-6814
ISSN(電子)2166-6822

其他

其他7th IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017
國家/地區德国
城市Berlin
期間2017/09/032017/09/06

ASJC Scopus subject areas

  • 電氣與電子工程
  • 工業與製造工程
  • 媒體技術

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