A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology

Ian Huang, Shao Ting Yen, Wei Pang Chao, Jeng Han Tsai, Abdulelah Alshehri, Mazen Almalki, Abdulhamid Sayed, Tian Wei Huang

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

This paper presents a power amplifier that performs well at both 28 GHz and 29 GHz for fifth generation mobile networks (5G) and satellite communications using 0.15-um D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices. The power amplifier with two-stage common-source (CS) and four-way direct combining architecture attained a small signal gain of 16.1 dB, the output 1-dB compression power (OPldB) of 29.1 dBm, and the power-added efficiency at OPldB of 27% at 28 GHz under 6-V supply voltage. At 29 GHz the small signal gain is 16 dB, the OPldB is 28.6 dBm, and the power-added efficiency at OPldB is 24.6% under 6-V supply voltage.

原文英語
主出版物標題2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面986-988
頁數3
ISBN(電子)9784902339451
DOIs
出版狀態已發佈 - 2019 一月 16
事件30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, 日本
持續時間: 2018 十一月 62018 十一月 9

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2018-November

會議

會議30th Asia-Pacific Microwave Conference, APMC 2018
國家/地區日本
城市Kyoto
期間2018/11/062018/11/09

ASJC Scopus subject areas

  • 電氣與電子工程

指紋

深入研究「A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology」主題。共同形成了獨特的指紋。

引用此